PULSE RICE TIME IN PLANAR GUNN DEVICES.SCHLACHETZKI A.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 9; PP. 1335-1337; BIBL. 8 REF.Article

SWITCHING IN MINIATURIZED PLANAR GUNN DEVICES.SCHLACHETZKI A.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 103-111; ABS. ALLEM.; BIBL. 24 REF.Article

PHOTODIODES FOR OPTICAL COMMUNICATIONSCHLACHETZKI A.1979; FREQUENZ; DEU; DA. 1979; VOL. 33; NO 10; PP. 283-290; ABS. GER; BIBL. 34 REF.Article

DOMAIN DISSOLUTION IN PLANAR GUNN DEVICES.SCHLACHETZKI A.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 37; NO 2; PP. K151-K155; BIBL. 1 P.Article

TRANSFERRED ELECTRON EFFECT IN IN_0.53GA_0.47ASKOWALSKY W; SCHLACHETZKI A.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 189-190; BIBL. 11 REF.Article

SHALLOW AND SELECTIVE DIFFUSION OF ZINC IN INDIUM PHOSPHIDEAYTAC S; SCHLACHETZKI A.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 1; PP. 57-61; BIBL. 17 REF.Article

BROAD-BAUD AMPLIFIER WHITH BIPOLAR TRANSISTOR FOR OPTICAL RECEIVERSAYTAC S; SCHLACHETZKI A.1982; JOURNAL OF OPTICAL COMMUNICATIONS; ISSN 0173-4911; DEU; DA. 1982; VOL. 3; NO 3; PP. 107-110; BIBL. 13 REF.Article

HIGH RESISTIVITY LAYERS OF GAAS GROWN BY LIQUID PHASE EPITAXY.SCHLACHETZKI A; SALOW H.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 7; NO 3; PP. 195-201; BIBL. 16 REF.Article

MEASUREMENTS OF THE INFLUENCE OF THE ND PRODUCT ON THE GUNN EFFECTSCHLACHETZKI A; MAUSE K.1972; ELECTRON. LETTERS; G.B.; DA. 1972; VOL. 8; NO 26; PP. 640-642; BIBL. 11 REF.Serial Issue

DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODESAYTAC S; SCHLACHETZKI A.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1135-1139; 4 P.; BIBL. 10 REF.Article

NEAR-BAND-GAP ABSORPTION OF INGAASP AT 1.3 MU M WAVE LENGTHKOWALSKY W; SCHLACHETZKI A; FIEDLER F et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 1; PP. 153-158; ABS. GER; BIBL. 13 REF.Article

INCORPORATION OF SN INTO EPITAXIAL GAAS GROWN FROM THE LIQUID PHASEKUPHAL E; SCHLACHETZKI A; POCKER A et al.1978; APPL. PHYS.; DEU; DA. 1978; VOL. 17; NO 1; PP. 63-72; BIBL. 30 REF.Article

InGaAs Gunn oscillatorsKOWALSKY, W; SCHLACHETZKI, A.Electronics Letters. 1984, Vol 20, Num 12, pp 502-503, issn 0013-5194Article

IMPURITY CONDUCTION AND MAGNETORESISTANCE IN LIGHTLY DOPED N-TYPE GAAS.KAHLERT H; LANDWEHR G; SCHLACHETZKI A et al.1976; Z. PHYS., B; DTSCH.; DA. 1976; VOL. 24; NO 4; PP. 361-365; BIBL. 27 REF.Article

CIRCUIT INTEGRATION OF GAAS GUNN DEVICES.MAUSE K; SCHLACHETZKI A; HESSE E et al.1974; I.E.E.E. TRANS. COMMUNIC.; U.S.A.; DA. 1974; VOL. 22; NO 9; PP. 1435-1440; BIBL. 10 REF.Article

Monolithic integration of InGaAsP-laser with transferred-electron device as fast laser driverHAHN, D; SCHLACHETZKI, A.IEEE journal of quantum electronics. 1996, Vol 32, Num 1, pp 14-19, issn 0018-9197Article

Automatic counting of etch pits in InPPEINER, E; SCHLACHETZKI, A.Journal of electronic materials. 1992, Vol 21, Num 9, pp 887-891, issn 0361-5235Article

Anodic dissolution electrochemical carrier-concentration profiling of siliconPEINER, E; SCHLACHETZKI, A.Journal of the Electrochemical Society. 1992, Vol 139, Num 2, pp 552-557, issn 0013-4651Article

Transferred-electron device as a large-signal laser driverHANSEN, K; SCHLACHETZKI, A.IEEE journal of quantum electronics. 1991, Vol 27, Num 3, pp 423-427, issn 0018-9197Article

Analysis of the transferred-electron effect in the InGaAsP systemKOWALSKY, W; SCHLACHETZKI, A.Solid-state electronics. 1987, Vol 30, Num 2, pp 161-172, issn 0038-1101Article

Optical parameters of InP-based waveguidesFIEDLER, F; SCHLACHETZKI, A.Solid-state electronics. 1987, Vol 30, Num 1, pp 73-83, issn 0038-1101Article

GUNN DEVICE GIGABIT RATE DIGITAL MICROCIRCUITS.MAUSE K; SCHLACHETZKI A; HESSE E et al.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 1; PP. 2-11; BIBL. 21 REF.Article

Etching simulation of convex and mixed InP and Si structuresCHAHOUD, M; WEHMANN, H.-H; SCHLACHETZKI, A et al.Sensors and actuators. A, Physical. 1998, Vol 69, Num 3, pp 251-258, issn 0924-4247Article

Unintentional redistribution of Zn in InGaAsP/InP heterostructuresPEINER, E; HANSEN, K; LÜBBE, M et al.Japanese journal of applied physics. 1996, Vol 35, Num 2A, pp 557-563, issn 0021-4922, 1Article

Thinning of InP by chemical etchingAYTAC, S; SCHLACHETZKI, A; PREHN, H.-J et al.Journal of materials science letters. 1983, Vol 2, Num 8, pp 447-450, issn 0261-8028Article